A self-aligned nano-fabrication process for vertical NbN–MgO–NbN Josephson junctions

Ultimately short ballistic vertical graphene Josephson junctions

Much efforts have been made for the realization of hybrid Josephson junctions incorporating various materials for the fundamental studies of exotic physical phenomena as well as the applications to superconducting quantum devices. Nonetheless, the efforts have been hindered by the diffusive nature of the conducting channels and interfaces. To overcome the obstacles, we vertically sandwiched a c...

Optimized fabrication process for nanoscale Josephson junctions used in superconducting quantum circuits

A Single lithography Self-Aligned vertical NanoRelay

We demonstrate the use of torsion in nanorelays to achieve low voltages, high speeds, single lithography step construction, and a form useful for configurability and electronic design enhancements in three-dimensional integrated implementations. The combined bending and torsion of self-aligned nanopillars facilitates the first top-down fabricated vertical three terminal nanoscale relay. Experim...

Self-shunted Nb/AlOx/Nb Josephson junctions

We describe the fabrication and properties of high critical current density (Jc) Nb/AlOx/Nb Josephson junctions with deep-submicron dimensions. The junctions are fabricated using a planarized process in which all levels are patterned using a combination of optical and electron beam lithography. The base and counter electrodes are defined by reactive ion etching using quartz etch masks to give a...

12.2 A CMOS-compatible Fabrication Process for Scaled Self-Aligned InGaAs MOSFETs

We have developed a scalable gate-last process to fabricate planar self-aligned InGaAs Quantum-well (QW) MOSFETs that relies on extensive use of dry recess. The fabrication sequence yields precise control of all critical transistor dimensions, in particular, the length and thickness of the channel and the access regions. The process involves a combination of anisotropic and isotropic F-based dr...